Objectives
We target a class of materials that are semiconductors (GaN, SiC) and insulators (AlN) adopting the wurtzite 3D structure in their bulk form. These materials are polar, accumulating charge and building electrostatic energy on their surface. Under a critical thickness of a few monolayers, the materials transition to a flat, non-polar 2D hexagonal phase resembling that of hexagonal boron nitride (hBN) in order to minimise or eliminate the electrostatic energy.
Our main objective
The main objective is to engineer these materials in the targeted 2D hexagonal phase and incorporate them into proof-of-concept transistors, memory and light emitting diode devices, to show that they can have an impact on electronic and photonic technologies.
